一种新型高精度低压CMOS带隙基准电压源
作者 :  陈迪平 吴旭 黄嵩人 季惠才 王镇道

  摘要:为消除运算放大器失调电压对带隙电压精度的影响,采用NPN型三极管产生ΔVbe,并设计全新的反馈环路结构产生了低压带隙电压.电路采用 SMIC 0.18 μm CMOS工艺实现,该新型低压带隙基准源设计输出电压为0.5 V,温度系数为8 ppm/℃,电源抑制比达到-130 dB,并成功运用于16位高速ADC芯片中.
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  关键词:带隙基准电压源;低压;正温度系数;负温度系数;电源抑制比
  中图分类号:TN402 文献标识码:A
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  参考文献:
  [1] BECKERGOMEZ A,LAKSHMI VISWANATHAN T,VISWANATHAN T R. Lowsupplyvoltage CMOS subbandgap reference[J]. IEEE Journal of Circuits and SystemsⅡ, 2008, 55(7): 609-613.
  [2] DEVITA G,IANNACCONE G. A Sub1V, 10 ppm/℃, nanopower voltage reference generator[J]. IEEE Journal of SolidState Circuits, 2007, 42(7):1536-1542.
  [3] NEUTEBOOM H,KUP B M J,JANSSENS M. A DSPbased hearing instrument IC[J]. IEEE Journal of SolidState Circuits, 1997, 32(11): 1790-1806.
  [4] BANBA H,SHIGA H,UMEZAWA A,et al.A CMOS bandgap reference circuit with Sub1V peration [J].IEEE Journal of SolidState Circuits,1999,34(5):670-674.
  [5] ANNEMA A J. Lowpower bandgap references featuring DTMOSTS[J]. IEEE Journal of SolidState Circuits,1999,34(7):949-955. 
  [6] ALLEN P E, HOLBERG D R. CMOS analog circuit design [M].2nd ed.New York: Oxford University Press,2002:153-156.
  [7] MALCOVATI P,MALOBERTI F,PRUZZI M,et al.Curvaturecompensated BiCMOS bandgap with 1V supply voltage[J]. IEEE Journal of SolidState Circuits,2001,36(7):1076-1081.
  [8] KER Mingdou,CHEN Jungsheng,CHU Chingyun. A CMOS bandgap reference circuit for sub 1V operation without using extra lowthreshold voltage device[J]. IEEE Journal of Circuits and Systems,2004,2150-2155.

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